increase in temperature of the intrinsic semiconductor
Explanation:
If the p-side has a higher doping concentration, it implies that number of holes (positive ion) increased which is greater than number of electron (negative ion) in the n-side
in order to balance the intrinsic concentration, that is to balance the number of holes and electrons which depends on temperature.
an increase in the temperature of the intrinsic semiconductor (p-side), increases the number of electron but number of holes remains constant.
A balance in the intrinsic concentration helps in tuning to the same radio channel.
