In an abrupt PN junction, if the doping levels on both sides of the junction are increased by 100X, the junction breakdown voltage: aIncreases by -30X O b. Decreases by-10X OcDepends on whether the n-side or P-side of the junction has a higher concentration. Od. Decreases by-100X O e Decrease by 10,000x Of Breakdown voltage is detemined by the breakdown field of the semiconductor, and is independent of the doping concentrations 3-Decreases by -30% Oh. Increase by 10.000X 1. Increases by-10X O Increases by-100X